---
title: 'Principal Semiconductor Device Engineer at Vertical Semiconductor'
canonical: 'https://feeny.ai/job/principal-semiconductor-device-engineer-vertical-semiconductor-somerville-6jkmbmhhxa8a'
type: 'job'
last_seen: '2026-09-05'
---

# Principal Semiconductor Device Engineer at Vertical Semiconductor

- **Company:** Vertical Semiconductor
- **Location:** Somerville, MA
- **Employment:** full-time
- **Work type:** onsite
- **Posted:** 2025-12-22
- **Last confirmed live:** 2026-09-05
- **Apply:** https://jobs.ashbyhq.com/verticalsemi/856356cd-96e8-4db4-b76d-bb0cae66d01b

## Job description

## COMPANY DESCRIPTION

Vertical Semiconductor, a venture-backed MIT spin-out, is leading the development of vertical gallium nitride (GaN) power electronics to build the foundational power layer for the next generation of compute and AI.

## ROLE DESCRIPTION

Vertical Semiconductor is seeking a Principal Semiconductor Device Engineer to serve as a senior technical contributor in the development and commercialization of our vertical GaN power device technology. This is a hands-on role is intended for an engineer with around 10-20 years of semiconductor R&D experience who can operate at the intersection of device physics, process integration, and manufacturability.

In this role, you will provide deep technical leadership across device architecture, process development, modeling, and characterization, while working closely with cross-functional partners in epitaxy, process engineering, packaging, reliability, and systems. You will play a critical role in defining device roadmaps, de-risking technology transitions, and guiding decisions that directly impact product performance and scalability.

This position offers the opportunity to help shape a world-changing power electronics platform at a pivotal stage, with direct influence on the company’s technical direction and long-term success. We prefer candidates who can work from our office at Greentown Labs (Somerville, MA).

## KEY RESPONSIBILITIES

- Serve as a technical subject-matter expert for vertical GaN and wide-bandgap power devices across the full R&D lifecycle, from concept through early production readiness
- Lead the definition and evolution of device architectures, performance targets, and design trade-offs for next-generation vertical GaN power devices
- Drive device modeling, simulation, and analytical understanding to guide design optimization, scaling strategies, and reliability improvements
- Plan and execute device development programs in shared fabs and external foundries, including technology transfer and process co-development
- Partner closely with internal and external teams on CMOS-compatible GaN process integration, yield learning, and manufacturability
- Provide technical leadership in failure analysis, reliability physics, and root-cause investigations for wide-bandgap power devices
- Oversee and interpret on-wafer and discrete device characterization, including DC, CV, dynamic, and high-power testing
- Develop and review GDS layouts, test structures, and evaluation vehicles to support device learning and validation
- Support system-level understanding through application evaluation boards, measurements, and correlation to device behavior
- Mentor junior engineers and influence technical best practices through informal technical leadership, design reviews, and knowledge sharing
- Contribute to IP development, publications, and external technical engagements as appropriate

## QUALIFICATIONS

- PhD or equivalent industry experience in Electrical Engineering, Physics, Materials Science, or Device Engineering
- Approximately 15–25 years of professional R&D experience in semiconductor device development
- Deep expertise in GaN or other wide-bandgap semiconductors (e.g., SiC), with a strong preference for power device experience
- Demonstrated track record of technical impact and innovation in advanced device development programs

## REQUIRED TECHNICAL SKILLS & EXPERIENCE

- Extensive experience with power device design in GaN and/or SiC, including vertical device concepts
- In-depth understanding of semiconductor manufacturing processes, integration challenges, and yield considerations
- Proven experience working in shared fab and foundry environments, including external technology transfers
- Strong proficiency in TCAD simulation for device physics, scaling, and optimization
- Advanced data analysis skills using Python, MATLAB, or equivalent tools
- Hands-on experience with GDS layout and test structure design
- Expertise in wide-bandgap power device failure analysis and reliability physics
- Experience with on-wafer automated DC/CV/dynamic testing and discrete component characterization
- Ability to perform analytical calculations, simulations, design, build, and measure application evaluation boards as needed
- Excellent communication skills with the ability to collaborate effectively across disciplines and with external partners

## VALUES & CULTURE FIT

Vertical Semiconductor is seeking an engineer who is not only capable of accelerating the technical vision of the company but is also willing to get involved in the day-to-day execution of a startup. The ideal candidate is someone who enjoys tackling complex engineering challenges, is comfortable with a hands-on approach in a collaborative arena and thrives in a startup environment where they can make an immediate impact. We value integrity, initiative, problem-solving, creativity and a passion for creating transformative technology that can change industries and improve the world.

## COMPENSATION

We offer a competitive salary and comprehensive benefits package with participation in our stock option program that is commensurable with candidates’ experience and impact.

## About Vertical Semiconductor

## Company Overview
- **One-liner**: Vertical Semiconductor is an MIT spin-out developing next-generation vertical gallium nitride (GaN) power semiconductors to serve as the foundational power layer for data centers, AI compute, and grid infrastructure.
- **Entity Type**: Private (Venture-backed; Seed stage)
- **Headquarters**: Somerville, Massachusetts, United States (also listed as Cambridge, MA)
- **Founded**: 2024
- **Founders**: Cynthia Liao (CEO & Co-founder), Dr. Joshua Perozek (CTO & Co-founder), Prof. Tomas Palacios (Advisor & Co-founder)

## Core Business
- **Primary Industry**: Semiconductor Manufacturing / Power Electronics
- **Target Customers**: B2B; Data center operators, grid infrastructure providers, and power system OEMs.
- **Mission/Purpose**: To build the foundational power layer for the next era of compute and AI by bringing the superiority of vertical GaN to a scalable manufacturing platform, enabling higher density and efficiency from 40 V to over 2 kV.

## Products & Services
- **Vertical GaN Power Transistors**: A family of high-voltage, high-density vertical gallium nitride (GaN) power devices designed for applications ranging from 40 V to 2.3 kV. These devices offer higher efficiency, higher switching frequency, increased power density, and lower total cost of ownership (TCO) compared to lateral GaN HEMTs and legacy silicon. The technology targets grid infrastructure and data center power systems, enabling a shift to more compact and reliable solid-state power converters.

## Market Standing
- **Valuation/Market Cap**: Not publicly available (private company).
- **Key Metric (Funding)**: Total funding of **$18.45 million** across two rounds (Seed as of Oct 2025: $11.0M; Venture round as of Mar 2025: $7.4M) [linkedin.com](https://www.linkedin.com/company/verticalsemiconductor).
- **Notable Investors/Partners**: Not publicly named in available sources, but is a venture-backed MIT spin-out leveraging technology developed at the Massachusetts Institute of Technology (MIT).
- **Growth Signals**: The company is actively scaling, with 8 total employees and 3 active job postings (Principal Applications Engineer, Principal Semiconductor Device Engineer, Semiconductor Process Engineer) as of mid-2025. LinkedIn shows a substantial yearly follower growth of +494.6% [builtin.com](https://builtin.com/company/vertical-semiconductor). The company is commercializing a differentiated technology with applications in high-growth markets (AI data centers, renewable energy grid infrastructure).

## Competitive Advantages
- **Vertical GaN Architecture**: Unlike conventional lateral GaN HEMTs that struggle to scale past 700V, Vertical Semiconductor’s vertical design inherently supports higher voltages (up to 2.3 kV) and higher current, unlocking new applications in grid and high-power compute.
- **MIT-Born IP**: Founders and technology originate from MIT, with the CTO (Dr. Joshua Perozek) earning his Ph.D. there developing novel vertical GaN transistor technologies, and Prof. Tomas Palacios serving as an advisor [verticalsemi.com](https://verticalsemi.com/).
- **Scalable Manufacturing**: The company emphasizes a "breakthrough manufacturing approach" that brings vertical GaN to a scalable platform, ready to meet the demands of modern power systems.
- **System-Level Benefits**: Their devices promise a lower total cost of ownership (TCO) through reduced system complexity, smaller footprints, and cooler operation, directly addressing key pain points in data center and grid infrastructure.

## Strategic Focus
- **Commercialization**: The company is in a critical phase of transitioning from R&D to commercial product, hiring senior applications and device engineers to drive customer technical engagement and product definition.
- **Target Markets**: Focused on two primary verticals: **Data Centers** (power converters for AI and compute) and **Grid Infrastructure** (solid-state power systems for HVDC and renewable energy).
- **Product Scaling**: Developing a family of devices from 40 V to 2.3 kV to cover a broad range of power applications.

## Why Work Here
- **High-Impact Startup**: Join an early-stage, venture-backed MIT spin-out working on foundational technology for the next era of compute and energy. Employees have significant ownership and direct impact on the product and company trajectory.
- **Hands-On Technical Work**: Roles emphasize deep, practical skills—from cleanroom fabrication to bench characterization of fast-switching wide bandgap devices. The company values building deep technical expertise.
- **Culture**: Described as valuing innovation, collaboration, and impact. The team is small (6-8 people), offering a tight-knit, fast-paced environment.
- **Work Policy**: Hybrid workspace based in Somerville, MA. Employees engage in a combination of remote and on-site work, with some roles requiring on-site presence (especially fabrication roles) [builtin.com](https://builtin.com/company/vertical-semiconductor).
- **Growth Potential**: As the company scales, senior hires have the potential to evolve into team leadership roles. The company offers a chance to build a career in a cutting-edge semiconductor technology.

## Sources
1. [verticalsemi.com](https://verticalsemi.com/)
2. [verticalsemi.com/careers](https://verticalsemi.com/careers)
3. [builtin.com](https://builtin.com/company/vertical-semiconductor)
4. [linkedin.com](https://www.linkedin.com/company/verticalsemiconductor)
5. [jobs.ashbyhq.com](https://jobs.ashbyhq.com/verticalsemi)

## Other roles at Vertical Semiconductor

- [Fall Commercial and Strategy MBA Intern/Co-Op](https://feeny.ai/job/fall-commercial-and-strategy-mba-intern-co-op-vertical-semiconductor-somerville-0ggbnfd40b9y) — Somerville, MA
- [Device Engineer](https://feeny.ai/job/device-engineer-vertical-semiconductor-somerville-wv821yqf9yb3) — Somerville, MA
- [Senior Characterization & Reliability Engineer for Power Semiconductors](https://feeny.ai/job/senior-characterization-reliability-engineer-for-power-semiconductors-vertical-w1m7t6pc0wty) — Somerville, MA
- [Principal Applications Engineer](https://feeny.ai/job/principal-applications-engineer-vertical-semiconductor-somerville-6wdc8d4d3n68) — Somerville, MA